THROUGH ELECTRODE SUBSTRATE AND SEMICONDUCTOR PACKAGE

• Main Authors: YAMAMOTO HIDEFUMI, HONDA HIROKI
• Format: Patent
• Language: English; Japanese
• Published: 08.12.2016
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

PROBLEM TO BE SOLVED: To provide a through electrode substrate having high thermal conductivity and high airtight reliability, while furthermore having deep ultraviolet weatherability, and to provide a semiconductor package.SOLUTION: A through electrode substrate includes a silicon base 11, a through lead 12 consisting of a high density electric conductor inserted into a through-hole provided in the silicon base, and a sealing glass 13 sealing the lead and the silicon base air-tightly. Furthermore, as a semiconductor package using this through electrode substrate, a semiconductor element including a silicon base, a through lead consisting of a high density electric conductor inserted into a through-hole provided in the silicon base, and a sealing glass sealing the through lead and the silicon base air-tightly, and stuck to the silicon base, wiring means for conducting the semiconductor element and through lead, and a glass lid stuck to the silicon base, while air-tightly covering the periphery of the semiconductor element, are provided.SELECTED DRAWING: Figure 1 【課題】高熱伝導性および高気密信頼性を有し、さらに深紫外耐候性も具備した貫通電極基板および半導体パッケージを提供する。【解決手段】シリコンベース１１と、このシリコンベースに設けた通孔に挿通した高密度電導体からなる貫通リード１２と、このリードとシリコンベースとを気密に封着した封止ガラス１３とを備えたことを特徴とする貫通電極基板である。さらに、この貫通電極基板を利用した半導体パッケージとして、シリコンベースと、このシリコンベースに設けた通孔に挿通した高密度電導体からなる貫通リードと、この貫通リードとシリコンベースとを気密に封着した封止ガラスとを備え、さらにシリコンベースに固着した半導体素子と、この半導体素子と貫通リードとを導通する配線手段と、半導体素子の周辺を気密に覆ってシリコンベースと固着したガラス蓋体とを設けた。【選択図】図１