MANUFACTURING METHOD OF COATING BASE MATERIAL

PROBLEM TO BE SOLVED: To provide a manufacturing method of a coating base material capable of industrially simply forming a comparatively thick coating film having a dry film thickness of 0.5 μm or more on the base material by using a coating liquid of the low solid content concentration of 3 wt.% o...

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Bibliographic Details
Main Authors TOKUDA IKUMI, KUBO YUJI, KANEFUJI YASUHEI
Format Patent
LanguageEnglish
Japanese
Published 24.11.2016
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Summary:PROBLEM TO BE SOLVED: To provide a manufacturing method of a coating base material capable of industrially simply forming a comparatively thick coating film having a dry film thickness of 0.5 μm or more on the base material by using a coating liquid of the low solid content concentration of 3 wt.% or less.SOLUTION: A manufacturing method of a coating base material of the present invention forms a coating film layer, by coating a coating liquid of the solid content concentration of 3% or less on the base material by a curtain coat or a slit coat, and then, holding for 1 second to 2 minutes within a temperature range of 50 to 250°C by heating the base material from at least one side. By applying the present invention, the coating base material having an electrode layer of indicating electric conductivity equivalent to an extremely general ITO electrode layer, can be easily provided as an electrode layer of a semiconductor device, by using a coating liquid of the solid content concentration of about 1.3 wt.% of including, for example, poly(3,4-ethylenedioxythiophene)/polystyrene sulfonate (PEDOT/PSS).SELECTED DRAWING: None 【課題】3wt%以下の低固形分濃度の塗布液を用いて基材上に乾燥膜厚0.5μm以上の比較的厚い塗膜を工業的に簡単に形成することを可能にする塗装基材の製造方法を提供すること。【解決手段】本発明の塗装基材の製造方法は、固形分濃度3%以下の塗布液をカーテンコート又はスリットコートで基材上に塗布し、続いて基材を少なくとも片側から加熱して50〜250℃の温度範囲内で1秒〜2分間保持することにより塗膜層を形成することを特徴とする。本発明を適用することにより、例えばポリ(3,4−エチレンジオキシチオフェン)/ポリスチレンスルホネート(PEDOT/PSS)を含有する固形分濃度1.3wt%程度の塗布液を使用して、半導体デバイスの電極層としてごく一般的なITO電極層並みの導電率を示す電極層を備えた塗装基材を容易に得ることができる。【選択図】なし
Bibliography:Application Number: JP20150076241