PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD

• Main Authors: FUKUCHI KOSUKE, USUI TAKETO, HIROTA KOSA, NAKAMOTO SHIGERU, INOUE TOMOMI
• Format: Patent
• Language: English; Japanese
• Published: 20.10.2016
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OFNEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMICBEAMS; SEMICONDUCTOR DEVICES

PROBLEM TO BE SOLVED: To enhance the yield of processing by precisely detecting the remaining thickness of a membrane to be processed during the processing.SOLUTION: A plasma processing method for processing a membrane structure formed previously on the upper surface of a wafer placed in the processing chamber in a vacuum container and including a membrane to be processed and a base membrane placed thereunder, by using a plasma formed in the processing chamber includes a step of calculating the etching amount of the membrane to be processed at the time of processing an arbitrary wafer, by using the comparison results of the data of an actual pattern and the data of a detection pattern synthesizing the actual pattern of intensity having the wavelength of interference light obtained while processing the membrane structure on an arbitrary wafer as a parameter, and two intensity patterns having the wavelength of the interference light obtained by processing the membrane structure having the membrane to be processed and three or more base membranes of different thickness before processing the arbitrary wafer as a parameter.SELECTED DRAWING: Figure 1 【課題】処理中に処理対象の膜の残り厚さを精密に検出して処理の歩留まりを向上させる。【解決手段】真空容器の内部の処理室内に載置されたウエハ上面に予め形成された膜構造であって処理対象の膜及びその下方に配置された下地膜を含む膜構造を前記処理室内に形成したプラズマを用いて処理するプラズマ処理方法であって、任意の前記ウエハ上の前記膜構造の処理中に得られた干渉光の波長をパラメータとする強度の実パターンと前記任意のウエハの処理の前に予め前記処理対象の膜及び前記下地膜の３つ以上の異なる厚さの前記下地膜を有した膜構造を処理して得られた前記干渉光の波長をパラメータとする強度のパターンのうち２つを合成した検出用パターンのデータと前記実パターンのデータとを比較した結果を用いて前記任意のウエハの処理中の時刻の前記処理対象の膜のエッチング量を算出するステップとを備えた。【選択図】 図１