DISTORTION DETECTION ELEMENT AND PRESSURE SENSOR

• Main Authors: KAJI SHIORI, NAGATA TOMOHIKO, HORI AKIO, FUKUZAWA HIDEAKI, FUJI YOSHIHIKO
• Format: Patent
• Language: English; Japanese
• Published: 13.10.2016
• Subjects: ARRANGEMENTS FOR MEASURING TWO OR MORE VARIABLES NOT COVEREDIN A SINGLE OTHER SUBCLASS; MEASURING; MEASURING ANGLES; MEASURING AREAS; MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER,MECHANICAL EFFICIENCY, OR FLUID PRESSURE; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS; MEASURING LENGTH, THICKNESS OR SIMILAR LINEARDIMENSIONS; MEASURING NOT SPECIALLY ADAPTED FOR A SPECIFIC VARIABLE; MEASURING OR TESTING NOT OTHERWISE PROVIDED FOR; PHYSICS; TARIFF METERING APPARATUS; TESTING

PROBLEM TO BE SOLVED: To provide a distortion detection element and a pressure sensor with high sensitivity.SOLUTION: According to an embodiment of the present invention, there is provided a distortion detection element including a deformable film, a first bias application section, a second bias application section, and a first distortion detection section. The first bias application section is located on the film and has a first bias magnetic layer and a first intermediate magnetic layer located between the first bias magnetic layer and the film. The second bias application section is located on the film and is aligned with the first bias application section in a second direction crossing a first direction toward the first bias application section from the film. The second bias application section includes a second bias magnetic layer and a second intermediate magnetic layer located between the second bias magnetic layer and the film. The first distortion detection section is located on the film between the first bias application section and the second bias application section. The electrical characteristics of the first distortion detection section varies depending on deformation of the film.SELECTED DRAWING: Figure 4 【課題】感度の高い歪検知素子及び圧力センサを提供する。【解決手段】実施形態によれば、変形可能な膜部と、第１バイアス印加部と、第２バイアス印加部と、第１歪検知部と、を含む歪検知素子が提供される。前記第１バイアス印加部は、前記膜部の上に設けられ、第１バイアス磁性層と、前記第１バイアス磁性層と前記膜部との間に設けられた第１中間磁性層と、を含む。前記第２バイアス印加部は、前記膜部の上に設けられ、前記膜部から前記第１バイアス印加部に向かう第１方向と交差する第２方向において前記第１バイアス印加部と並び、第２バイアス磁性層と、前記第２バイアス磁性層と前記膜部との間に設けられた第２中間磁性層と、を含む。前記第１歪検知部は、前記第１バイアス印加部と前記第２バイアス印加部との間において前記膜部の上に設けられ、前記膜部の変形に応じて電気的特性が変化する。【選択図】図４