GAS BARRIER FILM PRODUCED BY USING ORGANIC SILANE COMPOUND, AND PRODUCTION METHOD THEREOF

• Main Authors: TOKUHISA KENJI, CHIBA YOICHI
• Format: Patent
• Language: English; Japanese
• Published: 06.10.2016
• Subjects: CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION

PROBLEM TO BE SOLVED: To provide a production method of a gas barrier film showing high gas barrier performance.SOLUTION: In a production method of a gas barrier film comprising a SiOfilm, when forming a gas barrier film by PECVD method using an organic silane compound and oxygen as raw materials, following conditions are satisfied, namely, a power density of a RF power source 6 for plasma arc is 2.0-100 W/cm, and assuming that a flow rate of the organic silane compound is X and a flow rate of oxygen is Y, the flow rate ratio Y/X is 10-100.SELECTED DRAWING: Figure 1 【課題】高いガスバリア性能を示すガスバリア膜の製造方法の提供。【解決手段】有機シラン化合物および酸素を原料として用いたＰＥＣＶＤ法によってガスバリア膜を形成する際に、プラズマ放電用ＲＦ電源６の電力密度が２．０〜１００Ｗ／ｃｍ２であり、有機シラン化合物の流量をＸ、酸素の流量をＹとするとき、その流量比Ｙ／Ｘが１０〜１００の条件である、ＳｉＯ２膜からなるガスバリア膜の製造方法。【選択図】図１