SINGLE CRYSTAL GROWTH APPARATUS WITH LASER BEAM DIVISION DEVICE

• Main Authors: KAGA NAOHIRO, SANO NAOKI, KANEKO YOSHIO, TOKURA YOSHINORI
• Format: Patent
• Language: English; Japanese
• Published: 06.10.2016
• Subjects: AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR; CHEMISTRY; CRYSTAL GROWTH; METALLURGY; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; REFINING BY ZONE-MELTING OF MATERIAL; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; SINGLE-CRYSTAL-GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL

PROBLEM TO BE SOLVED: To provide a single crystal growth apparatus that is for floating molten zone type single crystal manufacture in which a single crystal is raised from a raw material rod, and can reduce laser power source costs.SOLUTION: The present invention relates to a single crystal growth device 100 which raises a single crystal from a raw material rod 1, the single crystal growth device 100 comprising: a semiconductor laser device 20 which has a laser power source 10 and emits semiconductor laser light 5 based upon electric power supplied by the laser power source 10; a laser light division device 30 which divides the semiconductor laser light 5 into M heating laser light beams 3; and laser irradiation heads 50-55 which emit the M heating laser light beams 3 toward the raw material rod 1. In the single crystal growth device 100, the laser light division device 30 comprises: a collimator lens which converts the semiconductor laser light into parallel light; a plurality of division mirrors which divide the semiconductor laser light into M semiconductor laser light beams; a plurality of attenuation mirrors which equalize laser light intensity among the M semiconductor laser light beams; and a condenser lens which condenses the M semiconductor laser light beams on optical fibers 41-45.SELECTED DRAWING: Figure 1 【課題】原料棒から単結晶を育成する浮遊溶融帯方式単結晶製造用のレーザ電源コストの低減が可能な単結晶育成装置の提供。【解決手段】原料棒１から単結晶を育成する単結晶育成装置１００において、レーザ電源１０を有し、レーザ電源１０が供給した電力に基づいて、半導体レーザ光５を出射する半導体レーザ装置２０と、半導体レーザ光５をＭ本の加熱レーザ光３に分割するレーザ光分割装置３０と、Ｍ本の加熱レーザ光３を原料棒１に向けて照射するレーザ照射ヘッド５０〜５５とを備える単結晶育成装置１００。レーザ光分割装置３０は、半導体レーザ光を平行光に変換するコリメータレンズと、半導体レーザ光をＭ本の半導体レーザ光に分割する複数の分割ミラーと、Ｍ本の半導体レーザ光のレーザ光強度を等しくする複数の減衰ミラーと、Ｍ本の半導体レーザ光を光ファイバ４１〜４５に集光する集光レンズとを備える単結晶育成装置１００。【選択図】図１