SEMICONDUCTOR LIGHT EMISSION DEVICE

• Main Authors: KOJIMA AKIHIRO, OBATA SUSUMU
• Format: Patent
• Language: English; Japanese
• Published: 29.09.2016
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

PROBLEM TO BE SOLVED: To provide a semiconductor light emission device having high productivity.SOLUTION: A semiconductor light emission device includes a semiconductor layer, first and second metal pillars, and an insulating layer. The semiconductor layer includes a first surface, a second surface opposite to the first surface, and a light emission layer. The first metal pillar is electrically connected to the second surface. The first metal pillar contains first and second metal layers, and the second metal layer is harder than the first metal layer. The first metal layer is provided between the second surface and the second metal layer. The second metal pillar is electrically connected to the first metal pillar and the second surface. The second metal pillar contains third and fourth metal layers. The fourth metal layer is harder than the third metal layer. The third metal layer is provided between the second surface and the fourth metal layer. The insulating layer is provided between the first metal pillar and the second metal pillar.SELECTED DRAWING: Figure 1 【課題】生産性の高い半導体発光装置を提供する。【解決手段】実施形態の半導体発光装置は、半導体層と、第１、第２金属ピラーと、絶縁層と、を含む。半導体層は、第１面と、第１面と反対側の第２面と、発光層とを含む。第１金属ピラーは、第２面と電気的に接続される。第１金属ピラーは、第１、第２金属層を含む、第２金属層の硬さは、第１金属層の硬さよりも硬い。第１金属層は、第２面と第２金属層との間に設けられる。第２金属ピラーは、第１金属ピラーと並び第２面と電気的に接続される。第２金属ピラーは、第３、第４金属層を含む。第４金属層の硬さは、第３金属層の硬さよりも硬い。第３金属層は、第２面と第４金属層との間に設けられる。絶縁層は、第１金属ピラーと第２金属ピラーとの間に設けられる。【選択図】図１