SEMICONDUCTOR LIGHT EMITTING ELEMENT

• Main Authors: KAGA KOJI, OKA TOSHIYUKI, MIYABE KAZUYUKI, SAWANO MASAKAZU
• Format: Patent
• Language: English; Japanese
• Published: 29.09.2016
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

PROBLEM TO BE SOLVED: To provide a semiconductor light emitting element which can improve efficiency.SOLUTION: According to an embodiment, a semiconductor light emitting element includes a substrate, first through sixth semiconductor layers, first and second conductive layer, a structure and a first insulation layer. The first conductive layer is electrically connected with the second semiconductor layer. The second conductive layer is electrically connected with the fifth semiconductor layer. At least a part of the structure is provided between the first semiconductor layer and the fourth semiconductor layer. The third conductive layer includes a first region, a second region and a third region between the first region and the second region. At least a part of the first insulation layer is provided between the third conductive layer and the fifth semiconductor layer. A fifth region of the first conductive layer is electrically connected with the first region. A part of the fourth semiconductor layer is provided between the second region and the second conductive layer. The structure is provided between the third region and the substrate. A thickness of the structure is smaller than a distance between the second region and the second conductive layer.SELECTED DRAWING: Figure 1 【課題】効率を向上できる半導体発光素子を提供する。【解決手段】実施形態によれば、半導体発光素子は、基体と、第１〜第６半導体層と、第１〜第２導電層と、構造体と、第１絶縁層と、を含む。第１導電層は、第２半導体層と電気的に接続される。第２導電層は、第５半導体層と電気的に接続される。構造体の少なくとも一部は、第１半導体層と第４半導体層との間に設けられる。第３導電層は、第１領域と、第２領域と、第１領域と第２領域との間の第３領域と、を含む。第１絶縁層の少なくとも一部は、第３導電層と第５半導体層との間に設けられる。第１導電層の第５領域は、第１領域と電気的に接続される。第４半導体層の一部は、第２領域と第２導電層との間に設けられる。構造体は、第３領域と基体との間に設けられる。構造体の厚さは、第２領域と第２導電層との間の距離よりも小さい。【選択図】図１