SEMICONDUCTOR LIGHT EMITTING ELEMENT

PROBLEM TO BE SOLVED: To provide a semiconductor light emitting element which can achieve stable characteristics.SOLUTION: According to an embodiment, a semiconductor light emitting element includes a substrate, first through third semiconductor layers, a first electrode and an insulation layer. The...

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Main Authors ISHIGURO AKIRA, KAGA KOJI, MIYABE KAZUYUKI, KUNIHIRO TAKASHI, KATSUNO HIROSHI, SAWANO MASAKAZU
Format Patent
LanguageEnglish
Japanese
Published 29.09.2016
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Summary:PROBLEM TO BE SOLVED: To provide a semiconductor light emitting element which can achieve stable characteristics.SOLUTION: According to an embodiment, a semiconductor light emitting element includes a substrate, first through third semiconductor layers, a first electrode and an insulation layer. The first semiconductor layer has a first conductivity type and separated from the substrate in a first direction. The first semiconductor layer includes a first semiconductor region, a second semiconductor region which lies alongside the first semiconductor region in a second direction crossing the first direction and a third semiconductor region between the first semiconductor region and the second semiconductor region. The second semiconductor layer has a second conductivity type and provided between the second semiconductor region and the substrate. The third semiconductor layer is provided between the second semiconductor region and the second semiconductor layer. The first electrode is provided between the substrate and the first semiconductor region and electrically connected with the first semiconductor region. The insulation layer includes a portion provided between the third semiconductor region and the substrate. The portion has a first surface on the substrate side and the first surface is tilted against the substrate.SELECTED DRAWING: Figure 1 【課題】安定した特性が得られる半導体発光素子を提供する。【解決手段】実施形態によれば、基体と、第1〜第3半導体層と、第1電極と、絶縁層と、を含む半導体発光素子が提供される。第1半導体層は、第1導電形であり、基体から第1方向に離間する。第1半導体層は、第1半導体領域と、第1方向と交差する第2方向において第1半導体領域と並ぶ第2半導体領域と、第1半導体領域と第2半導体領域との間の第3半導体領域と、を含む。第2半導体層は、第2導電形であり、第2半導体領域と基体との間に設けられる。第3半導体層は、第2半導体領域と第2半導体層との間に設けられる。第1電極は、基体と第1半導体領域との間に設けられ、第1半導体領域と電気的に接続される。絶縁層は、第3半導体領域と基体との間に設けられた部分を含む。部分は、基体の側の第1面を有し、第1面は、基体に対して傾斜する。【選択図】図1
Bibliography:Application Number: JP20150052119