SEMICONDUCTOR LIGHT EMISSION DEVICE
PROBLEM TO BE SOLVED: To provide a semiconductor light emission device that can perform uniform light emission.SOLUTION: A first semiconductor layer 11 includes a 1n-side region 11d surrounded by a lamination film 14 containing a light emission layer 13 and a second semiconductor layer 12. An n-side...
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Main Authors | , , , , , |
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Format | Patent |
Language | English Japanese |
Published |
23.09.2016
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Subjects | |
Online Access | Get full text |
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Summary: | PROBLEM TO BE SOLVED: To provide a semiconductor light emission device that can perform uniform light emission.SOLUTION: A first semiconductor layer 11 includes a 1n-side region 11d surrounded by a lamination film 14 containing a light emission layer 13 and a second semiconductor layer 12. An n-side electrode 17 has a first portion 17a provided to the side surface 11b of the first semiconductor layer 11, a second portion 17c provided to the 1n-side region 11d, and a third portion 17e which is overlapped with the p-side electrode 16 through an insulation film 18 and connects the first portion 17a and the second portion 17c.SELECTED DRAWING: Figure 1
【課題】均一発光が可能な半導体発光装置を提供する。【解決手段】実施形態によれば、第1半導体層11は、発光層13および第2半導体層12を含む積層膜14に囲まれた第1n側領域11dを有する。n側電極17は、第1半導体層11の側面11bに設けられた第1部分17aと、第1n側領域11dに設けられた第2部分17cと、絶縁膜18を介してp側電極16に重なり、第1部分17aと第2部分17cとを接続する第3部分17eと、を有する。【選択図】図1 |
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Bibliography: | Application Number: JP20150049093 |