PRODUCTION METHOD OF SILICON NANOPARTICLE LUMINOUS BODY, AND LUMINOUS ELEMENT USING SILICON NANOPARTICLE LUMINOUS BODY
PROBLEM TO BE SOLVED: To provide a production method of silicon nanoparticle luminous body having high light emission intensity in each wavelength, easily and comparatively inexpensively without lowering productivity.SOLUTION: In a step for dispersing silicon by sputtering into a silicon oxide film...
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Main Author | |
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Format | Patent |
Language | English Japanese |
Published |
23.09.2016
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Subjects | |
Online Access | Get full text |
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Summary: | PROBLEM TO BE SOLVED: To provide a production method of silicon nanoparticle luminous body having high light emission intensity in each wavelength, easily and comparatively inexpensively without lowering productivity.SOLUTION: In a step for dispersing silicon by sputtering into a silicon oxide film formed on a substrate, sputtering is performed in the state where an incident direction of particles to be sputtered which are targets to a substrate surface is adjusted at 10° to 80° with respect to a normal of the substrate, and a substrate temperature is adjusted at 300°C or lower, and then heat treatment is performed at 800°C to 1,350°C in non-oxidative atmosphere.SELECTED DRAWING: Figure 1
【課題】それぞれの波長でより発光強度が高いシリコンナノ粒子発光体を簡易で、生産性を低下させることなく、比較的安価に製造する方法を提供する。【解決手段】基板上に形成された酸化ケイ素膜中に、スパッタリングによりシリコンを分散させる工程において、ターゲットの被スパッタ粒子の基板面に対する入射方向が、基板の法線に対して10°から80°になるようにして、且つ基板温度を300℃以下にしてスパッタリングを行い、その後、非酸化雰囲気で800℃から1350℃で熱処理する。【選択図】図1 |
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Bibliography: | Application Number: JP20150050046 |