METAL DOPING OF AMORPHOUS CARBON AND SILICON FILM USED AS HARD MASK BY SUBSTRATE PROCESSING SYSTEM

• Main Authors: SIRISH REDDY, FAYAZ SHAIKH, ALICE HOLLISTER
• Format: Patent
• Language: English; Japanese
• Published: 15.09.2016
• Subjects: CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION

PROBLEM TO BE SOLVED: To provide a system and method for depositing a metal-doped amorphous carbon hard mask or metal-doped amorphous silicon hard mask film.SOLUTION: A method comprises: arranging a substrate in a processing chamber 204; supplying a carrier gas to the processing chamber 208; supplying a hydrocarbon precursor gas or silicon precursor gas to the processing chamber 216 respectively; supplying a metal-based precursor gas to the processing chamber 220; performing one of generation and supply of plasma in the processing chamber 222; and depositing a metal-doped amorphous carbon hard mask film or metal-doped amorphous silicon hard mask film on a substrate respectively 224.SELECTED DRAWING: Figure 2 【課題】金属ドープ非晶質炭素ハードマスク膜または金属ドープ非晶質シリコンハードマスク膜を堆積させるためのシステムおよび方法の提供。【解決手段】基板を処理チャンバ内に配置し204、キャリアガスを処理チャンバに供給し208、炭化水素前駆体ガスまたはシリコン前駆体ガスをそれぞれ処理チャンバに供給し216、金属系前駆体ガスを処理チャンバに供給し220、処理チャンバにおけるプラズマの発生または供給の一方を行い222、金属ドープ非晶質炭素ハードマスク膜または金属ドープ非晶質シリコンハードマスク膜をそれぞれ基板上に堆積させる224ことを含む方法。【選択図】図２