REFLECTION TYPE PHOTOMASK, AND MANUFACTURING METHOD OF THE SAME

• Main Authors: WATANABE GENTA, SAKATA AKIRA
• Format: Patent
• Language: English; Japanese
• Published: 08.09.2016
• Subjects: APPARATUS SPECIALLY ADAPTED THEREFOR; CINEMATOGRAPHY; ELECTROGRAPHY; HOLOGRAPHY; MATERIALS THEREFOR; ORIGINALS THEREFOR; PHOTOGRAPHY; PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES; PHYSICS

PROBLEM TO BE SOLVED: To provide a reflection type photomask for exposure and a manufacturing method thereof in which light is not reflected from regions other than a circuit pattern region, and exposure transfer can be performed accurately.SOLUTION: A reflection type photomask used for lithography which uses light having wavelength 5nm or more and 15nm or less as exposure light comprises: a substrate; a multilayer reflection film which is formed on the substrate and reflects exposure light; an absorber film which is formed on the multilayer reflection film to absorb the exposure light, in which a circuit pattern is formed on the absorber film, a light shielding region in which the multilayer reflection film and the absorber film are removed and the substrate is exposed is formed outside a region in which the circuit pattern is formed, and a moth-eye structure made of fine uneven pattern is formed in an area of the light shielding region where the substrate is exposed.SELECTED DRAWING: Figure 2 【課題】回路パターン領域以外から光が反射することがなく、精度よく露光転写が可能な反射型露光用フォトマスク及びその製造方法を提供すること。【解決手段】基板と、該基板上に形成された露光光を反射する多層反射膜と、該多層反射膜上に形成された露光光を吸収する吸収体膜とを具備する、波長５ｎｍ以上１５ｎｍ以下の光を露光光とするリソグラフィに用いられる反射型フォトマスクであって、前記吸収体膜には回路パターンが形成され、前記回路パターンが形成されている領域の外側には、前記多層反射膜及び吸収体膜が除去されて前記基板が露出する遮光領域が形成され、前記遮光領域の前記基板が露出している部分には、微細凹凸パターンからなるモスアイ構造体が形成されていることを特徴とする反射型フォトマスク。【選択図】図２