SEMICONDUCTOR SUBSTRATE AND SEMICONDUCTOR DEVICE
PROBLEM TO BE SOLVED: To provide a semiconductor substrate and a semiconductor device, which achieve less warpage.SOLUTION: A semiconductor substrate is formed by setting a rocking curve half width of a (002) plane of an AlN layer 12 measured by X-ray diffraction at not greater than 1500 seconds whe...
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Language | English Japanese |
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25.08.2016
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Abstract | PROBLEM TO BE SOLVED: To provide a semiconductor substrate and a semiconductor device, which achieve less warpage.SOLUTION: A semiconductor substrate is formed by setting a rocking curve half width of a (002) plane of an AlN layer 12 measured by X-ray diffraction at not greater than 1500 seconds when a GaN-based semiconductor layer 14 is formed via the AlN layer 12 formed on top of a SiC substrate 10, and by forming the GaN-based semiconductor layer 14 on the AlN layer 12 to make compression stress occur on the GaN-based semiconductor layer 14 on the AlN layer 12 which has improved crystallinity.SELECTED DRAWING: Figure 1
【課題】反りの小さな半導体基板および半導体装置を提供する。【解決手段】Si基板10上に接して形成したAlN層12を介してGaN系半導体層14を形成するに際し、前記AlN層12のX線回折による(002)面のロッキングカーブ半値幅を1500秒以下とし、前記AlN層12上にGaN系半導体層14を形成することにより結晶性を向上させた前記AlN層12上のGaN系半導体層14に圧縮応力が生じるようにして半導体基板を形成することによる。【選択図】図1 |
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AbstractList | PROBLEM TO BE SOLVED: To provide a semiconductor substrate and a semiconductor device, which achieve less warpage.SOLUTION: A semiconductor substrate is formed by setting a rocking curve half width of a (002) plane of an AlN layer 12 measured by X-ray diffraction at not greater than 1500 seconds when a GaN-based semiconductor layer 14 is formed via the AlN layer 12 formed on top of a SiC substrate 10, and by forming the GaN-based semiconductor layer 14 on the AlN layer 12 to make compression stress occur on the GaN-based semiconductor layer 14 on the AlN layer 12 which has improved crystallinity.SELECTED DRAWING: Figure 1
【課題】反りの小さな半導体基板および半導体装置を提供する。【解決手段】Si基板10上に接して形成したAlN層12を介してGaN系半導体層14を形成するに際し、前記AlN層12のX線回折による(002)面のロッキングカーブ半値幅を1500秒以下とし、前記AlN層12上にGaN系半導体層14を形成することにより結晶性を向上させた前記AlN層12上のGaN系半導体層14に圧縮応力が生じるようにして半導体基板を形成することによる。【選択図】図1 |
Author | YUI KEIICHI KITAMURA TAKAMITSU NAKADA TAKESHI MAKABE ISAO |
Author_xml | – fullname: KITAMURA TAKAMITSU – fullname: NAKADA TAKESHI – fullname: YUI KEIICHI – fullname: MAKABE ISAO |
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DocumentTitleAlternate | 半導体基板および半導体装置 |
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Snippet | PROBLEM TO BE SOLVED: To provide a semiconductor substrate and a semiconductor device, which achieve less warpage.SOLUTION: A semiconductor substrate is formed... |
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SubjectTerms | AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL CRYSTAL GROWTH DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SEMICONDUCTOR DEVICES SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL |
Title | SEMICONDUCTOR SUBSTRATE AND SEMICONDUCTOR DEVICE |
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