SEMICONDUCTOR SUBSTRATE AND SEMICONDUCTOR DEVICE

• Main Authors: KITAMURA TAKAMITSU, NAKADA TAKESHI, YUI KEIICHI, MAKABE ISAO
• Format: Patent
• Language: English; Japanese
• Published: 25.08.2016
• Subjects: AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR; BASIC ELECTRIC ELEMENTS; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; CRYSTAL GROWTH; DIFFUSION TREATMENT OF METALLIC MATERIAL; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; REFINING BY ZONE-MELTING OF MATERIAL; SEMICONDUCTOR DEVICES; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; SINGLE-CRYSTAL-GROWTH; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL

PROBLEM TO BE SOLVED: To provide a semiconductor substrate and a semiconductor device, which achieve less warpage.SOLUTION: A semiconductor substrate is formed by setting a rocking curve half width of a (002) plane of an AlN layer 12 measured by X-ray diffraction at not greater than 1500 seconds when a GaN-based semiconductor layer 14 is formed via the AlN layer 12 formed on top of a SiC substrate 10, and by forming the GaN-based semiconductor layer 14 on the AlN layer 12 to make compression stress occur on the GaN-based semiconductor layer 14 on the AlN layer 12 which has improved crystallinity.SELECTED DRAWING: Figure 1 【課題】反りの小さな半導体基板および半導体装置を提供する。【解決手段】Ｓｉ基板１０上に接して形成したＡｌＮ層１２を介してＧａＮ系半導体層１４を形成するに際し、前記ＡｌＮ層１２のＸ線回折による（００２）面のロッキングカーブ半値幅を１５００秒以下とし、前記ＡｌＮ層１２上にＧａＮ系半導体層１４を形成することにより結晶性を向上させた前記ＡｌＮ層１２上のＧａＮ系半導体層１４に圧縮応力が生じるようにして半導体基板を形成することによる。【選択図】図１