Ni SPUTTERING TARGET

• Main Authors: MISEKI KENICHIRO, NONAKA SOHEI
• Format: Patent
• Language: English; Japanese
• Published: 22.08.2016
• Subjects: CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION

PROBLEM TO BE SOLVED: To provide a Ni sputtering target to which sputtering can be stably performed even in the case where sputtering gas pressure is low.SOLUTION: An orientation degree R{220} of a {220} plane, which is calculated in the case where X-ray diffraction intensity from a {111} plane is I{111}, X-ray diffraction intensity from a {200} plane is I{200}, and X-ray diffraction intensity from a {220} plane is I{220} on a sputtering surface, and X-ray diffraction intensity from the {111} plane is I{111}, X-ray diffraction intensity from the {200} plane is I{200}, and X-ray diffraction intensity from the {220} plane is I{220} on a randomly oriented standard sample, is made larger than an orientation degree R{111} of the {111} plane and an orientation degree R{200} of the {200} plane, surface roughness of the sputtering surface is within a range of 1.00 μm or more and 6.30 μm or less at arithmetic average roughness Ra, and an average crystal grain diameter of the sputtering surface is within a range of 50 μm or more and 250 μm or less.SELECTED DRAWING: None 【課題】スパッタガス圧が低い場合であっても安定してスパッタを行うことが可能なＮｉスパッタリングターゲットを提供する。【解決手段】スパッタ面における｛１１１｝面からのＸ線回折強度をＩ｛１１１｝、｛２００｝面からのＸ線回折強度をＩ｛２００｝、｛２２０｝面からのＸ線回折強度をＩ｛２２０｝、かつ、ランダム配向した標準試料における｛１１１｝面からのＸ線回折強度をＩＳ｛１１１｝、｛２００｝面からのＸ線回折強度をＩＳ｛２００｝、｛２２０｝面からのＸ線回折強度をＩＳ｛２２０｝とした場合に算出される｛２２０｝面の配向度Ｒ｛２２０｝が、｛１１１｝面の配向度Ｒ｛１１１｝及び｛２００｝面の配向度Ｒ｛２００｝よりも大きくされており、前記スパッタ面の表面粗さが、算術平均粗さＲａで１．００μｍ以上６．３０μｍ以下の範囲内とされ、前記スパッタ面の平均結晶粒径が５０μｍ以上２５０μｍ以下の範囲内とされている。【選択図】なし