EPITAXIAL WAFER, SEMICONDUCTOR LIGHT-EMITTING ELEMENT, LIGHT-EMITTING DEVICE, AND MANUFACTURING METHOD OF EPITAXIAL WAFER

• Main Author: KURIHARA KO
• Format: Patent
• Language: English; Japanese
• Published: 08.08.2016
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

PROBLEM TO BE SOLVED: To provide an epitaxial wafer capable of reducing a forward voltage and improving light output without intentionally generating penetration dislocation.SOLUTION: An epitaxial wafer includes: a c-plane GaN substrate; an n-type conductive layer formed on one side of a main surface of the c-plane GaN substrate; a light-emitting layer formed on the one side of the main surface of the n-type conductive layer and composed of a multiple quantum well formed by alternately laminating a quantum well layer and a barrier layer; and a first intermediate layer formed between the n-type conductive layer and the barrier layer, and composed of a GaN layer. The number of layers of the quantum well layers is 3 to 6.SELECTED DRAWING: Figure 2 【課題】貫通転位を意図的に発生させることなく、順方向電圧を低減させ得ると共に光出力を向上させ得るエピタキシャルウエハを提供する。【解決手段】本発明のエピタキシャルウエハは、ｃ面ＧａＮ基板と、前記ｃ面ＧａＮ基板の一方側の主表面上に形成されたｎ型導電層と、前記ｎ型導電層の一方側の主表面上に形成され、量子井戸層と障壁層とが交互に積層された多重量子井戸層からなる発光層と、前記ｎ型導電層と前記障壁層との間に形成された、ＧａＮ層からなる第１中間層と、を備え、前記量子井戸層の層数は３〜６層である。【選択図】図２