FIELD EFFECT TRANSISTOR

PROBLEM TO BE SOLVED: To provide a small field effect transistor capable of suppressing loop oscillation even after a drain finger, a source finger and a gate finger are lengthened.SOLUTION: A diode 8 is constituted of a gate finger 7 and a source finger 4 disposed on the outer periphery. Thus, even...

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Bibliographic Details
Main Authors YAMAGUCHI YUTARO, KUWATA EIGO, SUGIMOTO ATSUO, KAMO NOBUTAKA, YAMANAKA KOJI
Format Patent
LanguageEnglish
Japanese
Published 04.08.2016
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:PROBLEM TO BE SOLVED: To provide a small field effect transistor capable of suppressing loop oscillation even after a drain finger, a source finger and a gate finger are lengthened.SOLUTION: A diode 8 is constituted of a gate finger 7 and a source finger 4 disposed on the outer periphery. Thus, even when a high output is obtained by lengthening a drain finger 2, the source finger 4 and the gate finger 6, loop oscillation can be suppressed.SELECTED DRAWING: Figure 1 【課題】ドレインフィンガ、ソースフィンガ及びゲートフィンガを長くしても、ループ発振を抑圧することができる小型の電界効果トランジスタを提供する。【解決手段】ゲートフィンガ７と外周に配置されているソースフィンガ４がダイオード８を構成する。これにより、ドレインフィンガ２、ソースフィンガ４及びゲートフィンガ６を長くして高出力化を図る場合でも、ループ発振を抑圧できる。【選択図】図１
Bibliography:Application Number: JP20150012422