EPITAXIAL WAFER, SEMICONDUCTOR LIGHT-EMITTING ELEMENT, LIGHT-EMITTING DEVICE AND MANUFACTURING METHOD OF EPITAXIAL WAFER

• Main Authors: KURIHARA KO, OUCHI YOICHIRO
• Format: Patent
• Language: English; Japanese
• Published: 28.07.2016
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

PROBLEM TO BE SOLVED: To provide an epitaxial wafer capable of improving optical output while reducing a forward voltage by intentionally generating no threading dislocation.SOLUTION: The epitaxial wafer includes: a c-plane GaN substrate; an n-type conductive layer which is formed over a principal s...