EPITAXIAL WAFER, SEMICONDUCTOR LIGHT-EMITTING ELEMENT, LIGHT-EMITTING DEVICE AND MANUFACTURING METHOD OF EPITAXIAL WAFER

• Main Authors: KURIHARA KO, OUCHI YOICHIRO
• Format: Patent
• Language: English; Japanese
• Published: 28.07.2016
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

PROBLEM TO BE SOLVED: To provide an epitaxial wafer capable of improving optical output while reducing a forward voltage by intentionally generating no threading dislocation.SOLUTION: The epitaxial wafer includes: a c-plane GaN substrate; an n-type conductive layer which is formed over a principal surface at one side of the c-plane GaN substrate; and a luminescent layer which is formed over the principal surface of the n-type conductive layer, and which includes a multi quantum well layer including a quantum well layer and a barrier layer which are laminated alternately. The quantum well layer is constituted of a first InGaN layer, and the barrier layer includes a second InGaN layer which contains an In composition smaller than that of the first InGaN layer.SELECTED DRAWING: Figure 3 【課題】貫通転位を意図的に発生させることなく、順方向電圧を低減させ得ると共に光出力を向上させ得るエピタキシャルウエハを提供する。【解決手段】本発明のエピタキシャルウエハは、ｃ面ＧａＮ基板と、前記ｃ面ＧａＮ基板の一方側の主表面上に形成されたｎ型導電層と、前記ｎ型導電層の主表面上に形成され、量子井戸層と障壁層とが交互に積層された多重量子井戸層を含む発光層と、を備え、前記量子井戸層は、第１ＩｎＧａＮ層からなり、前記障壁層は、前記第１ＩｎＧａＮ層に比してＩｎ組成の少ない第２ＩｎＧａＮ層を含む。【選択図】図３