SEMICONDUCTOR MANUFACTURING EQUIPMENT

• Main Authors: MATSUO KAZUNORI, AISO FUMIKI, TAKAHASHI KENSEI
• Format: Patent
• Language: English; Japanese
• Published: 25.07.2016
• Subjects: BASIC ELECTRIC ELEMENTS; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; SEMICONDUCTOR DEVICES; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION

PROBLEM TO BE SOLVED: To provide semiconductor manufacturing equipment capable of supplying a material gas of a generally constant amount to a reaction chamber or capable of preventing a material or a reaction product from entering into a pipe communicating with the reaction chamber from a container in a deposition process, and to provide a manufacturing method of semiconductor device.SOLUTION: The semiconductor manufacturing equipment includes a reaction chamber capable of storing a semiconductor substrate and forming a deposition film over the surface of the semiconductor substrate. A first container contains a material for a deposition film. A second container accumulates a material gas generated in the first container and supplies the material gas to the reaction chamber. A first pipe connects the first container and the second container therebetween. The second pipe supplies an inert gas to the second container.SELECTED DRAWING: Figure 1 【課題】堆積工程において、反応チャンバへほぼ一定量の材料ガスを供給することができ、または、容器内の原料または反応生成物が反応チャンバに通じる配管へ侵入することを抑制することができる半導体製造装置および半導体装置の製造方法を提供する。【解決手段】本実施形態による半導体製造装置は、半導体基板を収納し、該半導体基板の表面上に堆積膜を形成可能な反応チャンバを備える。 第１容器は堆積膜の原料を収容する。第２容器は、第１容器で生成された原料ガスを溜め、該原料ガスを反応チャンバへ供給する。第１配管は、第１容器と前記第２容器との間を接続する。第２配管は、第２容器に不活性ガスを供給する。【選択図】図１