OXIDE SINTERED BODY, SPUTTERING TARGET AND OXIDE THIN FILM

• Main Authors: NARA ATSUSHI, SEKI HIDETO
• Format: Patent
• Language: English; Japanese
• Published: 25.07.2016
• Subjects: ARTIFICIAL STONE; CEMENTS; CERAMICS; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDINGMATERIALS; CONCRETE; DIFFUSION TREATMENT OF METALLIC MATERIAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; LIME, MAGNESIA; METALLURGY; REFRACTORIES; SLAG; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; TREATMENT OF NATURAL STONE

PROBLEM TO BE SOLVED: To provide a sintered body capable of providing a conductive oxide thin film having desired optical characteristics and electrical characteristics, and further good chemical characteristics.SOLUTION: There is provided an oxide sintered body consisting of zinc (Zn), indium (In), titanium (Ti), tin (Sn), gallium (Ga), germanium (Ge) and oxygen (O) with the Zn content of 40 to 80 mol% in terms of ZnO, the In content of 3 to 25 mol% in terms of InO, the Ti content of 2 to 15 mol% in terms of TiO, the Sn content of 5 to 35 mol% in terms of SnO, the Ga content of 0.5 to 10 mol% in terms of GaOand the Ge content of 0.5 to 10 mol% in terms of GeO. There is provided the oxide sintered body capable of DC sputtering with low bulk resistance and forming a transparent conductive film having desired refraction index and permeability and further excellent chemical characteristics.SELECTED DRAWING: None 【課題】所望の光学特性と電気的特性、さらには良好な化学的特性を備えた導電性酸化物薄膜を得ることが可能な焼結体の提供。【解決手段】亜鉛（Ｚｎ）、インジウム（Ｉｎ）、チタン（Ｔｉ）、錫（Ｓｎ）、ガリウム（Ｇａ）、ゲルマニウム（Ｇｅ）、及び、酸素（Ｏ）からなり、Ｚｎ含有量がＺｎＯ換算で４０〜８０ｍｏｌ％、Ｉｎ含有量がＩｎ２Ｏ３換算で３〜２５ｍｏｌ％、Ｔｉ含有量がＴｉＯ２換算で２〜１５ｍｏｌ％、Ｓｎ含有量がＳｎＯ２換算で５〜３５ｍｏｌ％、Ｇａ含有量がＧａ２Ｏ３換算で０．５〜１０ｍｏｌ％、Ｇｅ含有量がＧｅＯ２換算で０．５〜１０ｍｏｌ％であることを特徴とする酸化物焼結体。バルク抵抗率が低くＤＣスパッタリングが可能であり、所望の屈折率や透過率、さらには優れた化学的特性を備えた透明導電膜を形成する酸化物焼結体。【選択図】なし