SEMICONDUCTOR DEVICE

• Main Authors: HIRANO HIROSHIGE, TETANI MICHINARI
• Format: Patent
• Language: English; Japanese
• Published: 14.07.2016
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

PROBLEM TO BE SOLVED: To enable relaxation of stress caused by a rewire in a semiconductor device.SOLUTION: A semiconductor device has a first insulation film 11 provided on a semiconductor substrate 1, a first wire 5 formed in the first insulation film 11, a rewire 7 which is formed on the first insulation film 11 and contains copper, a second insulation film 8 formed on the rewire 7, a first connection portion which is formed in the first insulation film 7 and connects the first wire 5 and the rewire 7, and a second connection portion which penetrates through the second insulation film 8 and reaches the rewire 7. The first connection portion contains plural first contacts 6, and the dimension in the principal surface direction of the semiconductor substrate 1 in the first contact 6 is not more than a predetermined value dependent on the film thickness of the rewire 7.SELECTED DRAWING: Figure 1 【課題】半導体装置において、再配線による応力を緩和する。【解決手段】半導体装置は、半導体基板１上に設けられた第１の絶縁膜１１と、第１の絶縁膜１１中に形成された第１の配線５と、第１の絶縁膜１１上に形成され、銅を含む再配線７と、再配線７上に形成された第２の絶縁膜８と、第１の絶縁膜７中に形成され、第１の配線５と再配線７とを接続する第１の接続部と、第２の絶縁膜８を貫通して再配線７に達する第２の接続部とを備える。第１の接続部は、複数の第１のコンタクト６を含み、第１のコンタクト６における半導体基板１の主面方向の寸法は、再配線７の膜厚に依存する所定の値以下である。【選択図】図１