METHOD FOR MANUFACTURING SILICON CARBIDE EPITAXIAL SUBSTRATE AND METHOD FOR MANUFACTURING SILICON CARBIDE SEMICONDUCTOR DEVICE

• Main Authors: NAKAMURA ISAMU, MITANI YOICHIRO
• Format: Patent
• Language: English; Japanese
• Published: 11.07.2016
• Subjects: AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR; BASIC ELECTRIC ELEMENTS; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; CRYSTAL GROWTH; DIFFUSION TREATMENT OF METALLIC MATERIAL; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; REFINING BY ZONE-MELTING OF MATERIAL; SEMICONDUCTOR DEVICES; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; SINGLE-CRYSTAL-GROWTH; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL

PROBLEM TO BE SOLVED: To easily confirm the presence of a crystal defect in an epitaxial layer.SOLUTION: A single crystal substrate 1 which is made from a silicon carbide and has a plurality of micropipes is prepared. An epitaxial layer 3 which is made from a silicon carbide and receives at least some out of the plurality of micropipes 2 is formed on the single crystal substrate 1. The epitaxial layer 3 is formed by epitaxial growth using a material gas containing Si atoms and C atoms so as to make a ratio of the C atoms to the Si atoms become 1.0 or more and 1.5 or less, on the single crystal substrate 1 heated at a growth temperature of 1630°C or more and 1680°C or less, and with a growth rate 1 μm/h or more and 5 μm/h or less.SELECTED DRAWING: Figure 5 【課題】エピタキシャル層中の結晶欠陥の存在を容易に把握する。【解決手段】炭化珪素から作られ、複数のマイクロパイプを有する単結晶基板１が準備される。単結晶基板１上に、炭化珪素から作られ、複数のマイクロパイプ２のうち少なくとも一部を引き継いだエピタキシャル層３が形成される。エピタキシャル層３は、Ｓｉ原子に対するＣ原子の比率が１．０以上１．５以下となるようにＳｉ原子およびＣ原子を含む原料ガスを用いた、１６３０℃以上１６８０℃以下の成長温度に加熱された単結晶基板１上での、１μｍ／ｈ以上５μｍ／ｈ以下の成長速度でのエピタキシャル成長によって形成される。【選択図】図５