SEMICONDUCTOR DEVICE
PROBLEM TO BE SOLVED: To examine internal stress of a semiconductor device including a conductive film, which is affected by the internal stress of the conductive film.SOLUTION: The semiconductor device including an n-channel type TFT provided on an insulating surface is so configured that impurity...
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Main Author | |
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Format | Patent |
Language | English Japanese |
Published |
07.07.2016
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Subjects | |
Online Access | Get full text |
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Summary: | PROBLEM TO BE SOLVED: To examine internal stress of a semiconductor device including a conductive film, which is affected by the internal stress of the conductive film.SOLUTION: The semiconductor device including an n-channel type TFT provided on an insulating surface is so configured that impurity elements are introduced to a conductive film, for instance, a gate electrode so that a semiconductor film is subjected to a pulling stress. The semiconductor device including a p-channel type TFT provided on an insulating surface is so configured that impurity elements are introduced to a conductive film, for instance, a gate electrode so that a semiconductor film is subjected to a compression stress.SELECTED DRAWING: Figure 6
【課題】導電膜を有する半導体装置は、導電膜の内部応力の影響を受ける。内部応力について検討する。【解決手段】絶縁表面上に設けられたnチャネル型TFTを有する半導体装置は、半導体膜が引っ張り応力を受けるように、導電膜、例えばゲート電極に不純物元素が導入され、絶縁表面上に設けられたpチャネル型TFTを有する半導体装置は、半導体膜が圧縮応力を受けるように、導電膜、例えばゲート電極に不純物が導入されている。【選択図】図6 |
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Bibliography: | Application Number: JP20160018941 |