FILM DEPOSITION APPARATUS AND CHAMBER FOR FILM DEPOSITION APPARATUS

• Main Authors: FUKUDA HIROYUKI, IIO ITSUSHI, ITO HIDEHIKO
• Format: Patent
• Language: English; Japanese
• Published: 30.06.2016
• Subjects: CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION

PROBLEM TO BE SOLVED: To provide a film deposition apparatus capable of improving the use efficiency of a film deposition material.SOLUTION: A film deposition apparatus 1 deposits a film on a substrate 11 in a vacuum chamber 10. The vacuum chamber 10 is divided into a transfer part 10a where the substrate 11 is transferred, a material installation part 10b in which a film deposition material Ma is installed, and a film deposition part 10c between the transfer part 10a and the material installation part 10b. At least one of a pair of walls facing each other in a transfer direction A of the substrate 11 in the film deposition part 10c is formed with an overhanging part 21 where an edge part on a transfer part 10a side overhangs outward. In the transfer direction A of the substrate 11, an opening width L1 on a transfer part 10a side of the film deposition part 10c is larger than an opening width L2 on a material installation part 10b side.SELECTED DRAWING: Figure 1 【課題】成膜材料の利用効率を向上することができる成膜装置を提供する。【解決手段】本発明は、真空チャンバー１０内で基板１１に成膜を行う成膜装置１であって、真空チャンバー１０は、基板１１が搬送される搬送部１０ａと、成膜材料Ｍａが設置される材料設置部１０ｂと、搬送部１０ａ及び材料設置部１０ｂの間の成膜部１０ｃと、に分けられ、成膜部１０ｃにおいて基板１１の搬送方向Ａで対向する一対の壁の少なくとも一方には、搬送部１０ａ側の端部が外側へ張り出す張出部２１が形成されており、基板１１の搬送方向Ａにおいて、成膜部１０ｃの搬送部１０ａ側の開口幅Ｌ１は材料設置部１０ｂ側の開口幅Ｌ２より大きい。【選択図】図１