NITRIDE SEMICONDUCTOR LIGHT-EMITTING ELEMENT WITH PERIODIC GAIN ACTIVE LAYER

• Main Authors: MATSUI TAKEKI, AKASAKI ISAMU, TAKEUCHI TETSUYA, IWATANI MOTOAKI, IWAYAMA AKIRA, AKAGI TAKANOBU
• Format: Patent
• Language: English; Japanese
• Published: 20.06.2016
• Subjects: BASIC ELECTRIC ELEMENTS; DEVICES USING STIMULATED EMISSION; ELECTRICITY

PROBLEM TO BE SOLVED: To provide a nitride semiconductor light-emitting element with a periodic gain active layer, capable of satisfactorily emitting light.SOLUTION: The nitride semiconductor light-emitting element with the periodic gain active layer comprises an n-type semiconductor layer 41, a p-type semiconductor layer 42, and a double wavelength resonator 29. The nitride semiconductor light-emitting element with the periodic gain active layer also comprises between the n-type semiconductor layer 41 and the p-type semiconductor layer 42: a first active layers 10 and a second active layer 12 which are disposed at a peak position of light intensity being present within the double wavelength resonator 29; and an intermediate layer 11 that is disposed between the first active layer 10 and the second active layer 12. A light-emitting intensity of the second active layer 12 that is disposed closer to the p-type semiconductor layer 42 is greater than that of the first active layer 10 that is disposed closer to the n-type semiconductor layer 41.SELECTED DRAWING: Figure 7 【課題】良好に発光することができる周期利得活性層を有する窒化物半導体発光素子を提供する。【解決手段】本発明の周期利得活性層を有する窒化物半導体発光素子は、ｎ型半導体層４１、ｐ型半導体層４２、及び２波長共振器２９を備えた周期利得活性層を有する窒化物半導体発光素子であって、ｎ型半導体層４１とｐ型半導体層４２との間に共２波長振器２９内に存在する光強度のピーク位置に配置された複数の第１活性層１０及び第２活性層１２と、第１活性層１０及び第２活性層１２の間に配置された中間層１１とを備えており、ｐ型半導体層４２側に配置された第２活性層１２の発光強度がｎ型半導体層４１側に配置された第１活性層１０の発光強度より大きいことを特徴とする。【選択図】図７