MULTIPLE CHARGED PARTICLE BEAM LITHOGRAPHY APPARATUS AND MULTIPLE CHARGED PARTICLE BEAM LITHOGRAPHY METHOD

• Main Authors: KATO YASUO, KAWANA RYO
• Format: Patent
• Language: English; Japanese
• Published: 02.06.2016
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

PROBLEM TO BE SOLVED: To provide a multiple charged particle beam lithography apparatus capable of correcting positional displacement and dimensional displacement of a pattern formed by being irradiated with multiple beams containing a positionally-displaced beam.SOLUTION: A multiple charged particle beam lithography apparatus 100 includes: a weighting coefficient calculation unit 54 for calculating a plurality of weighting coefficients that assign weights to doses of a plurality of different beams used for multiple pattern drawing for each pixel of pixels, each pixel being used as an irradiation unit region per beam of multiple charged particle beams; an irradiation dose calculation unit 55 for calculating doses of the plurality of different beams weighted by using a corresponding weighting coefficient among the plurality of weighting coefficients for each of the pixels; and a drawing unit 150 for drawing a pattern on a sample using the multiple charged particle beams such that corresponding pixels are irradiated with the plurality of different beams of the doses weighted respectively.SELECTED DRAWING: Figure 1 【課題】位置ずれが生じているビームを含むマルチビームが照射されるによって形成されるパターンの位置ずれ、寸法ずれを補正することが可能なマルチ荷電粒子ビーム描画装置を提供する。【解決手段】マルチ荷電粒子ビーム描画装置１００は、マルチ荷電粒子ビームの１つのビームあたりの照射単位領域となる画素毎に、当該画素を多重描画する複数の異なるビームの照射量に重み付けする複数の重み付け係数を演算する重み係数演算部５４と、画素毎に、複数の重み付け係数のうち、対応する重み付け係数を用いて重み付けされた複数の異なるビームの照射量を演算する照射量演算部５５と、それぞれ重み付けされた照射量の複数の異なるビームが対応する画素に照射されるように、マルチ荷電粒子ビームを用いて試料にパターンを描画する描画部１５０と、を備える。【選択図】図１