THIN FILM TRANSISTOR SUBSTRATE MANUFACTURING METHOD

• Main Author: SUGAWARA YUTA
• Format: Patent
• Language: English; Japanese
• Published: 02.06.2016
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC HEATING; ELECTRIC LIGHTING NOT OTHERWISE PROVIDED FOR; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

PROBLEM TO BE SOLVED: To provide a thin film transistor substrate which can adjust a threshold value of a thin film transistor using an oxide semiconductor for a channel layer to an intended value.SOLUTION: A manufacturing method of a TFT substrate 20 in which a thin film transistor 100 is formed on a substrate 110 comprises: a step of forming an oxide semiconductor layer 140 above the substrate 110; a step of forming a first oxide film 151 on the oxide semiconductor layer 140; a step of performing an oxidation treatment on the oxide semiconductor layer 140 after forming the first oxide film 151; and a step of forming a second oxide film 152 above the first oxide film 151 after performing the oxidation treatment. In the step of performing the oxidation treatment, parameters are defined based on a preliminarily calculated relation between parameters of the oxidation treatment and a threshold value of the thin film transistor 100 so as to make the threshold value of the thin film transistor 100 be a predetermined value.SELECTED DRAWING: Figure 5A 【課題】チャネル層に酸化物半導体を用いた薄膜トランジスタの閾値を、所望の値に調整することができる薄膜トランジスタ基板の製造方法を提供する。【解決手段】基板１１０上に薄膜トランジスタ１００が形成されたＴＦＴ基板２０の製造方法であって、前記基板１１０の上方に酸化物半導体層１４０を形成する工程と、酸化物半導体層１４０上に第１酸化膜１５１を形成する工程と、第１酸化膜１５１を形成した後に、酸化物半導体層１４０に対する酸化性処理を行う工程と、酸化性処理を行った後に、第１酸化膜１５１の上方に第２酸化膜１５２を形成する工程とを含み、酸化性処理を行う工程において、酸化性処理のパラメータと薄膜トランジスタ１００の閾値との予め求められた関係に基づいて、薄膜トランジスタ１００の閾値が所定の値となるように、パラメータが定められる。【選択図】図５Ａ