INFORMATION PROCESSOR, INFORMATION PROCESSING METHOD, AND PROGRAM

• Main Author: KAWAE DAISUKE
• Format: Patent
• Language: English; Japanese
• Published: 02.06.2016
• Subjects: BASIC ELECTRIC ELEMENTS; CALCULATING; COMPUTING; COUNTING; ELECTRIC DIGITAL DATA PROCESSING; ELECTRIC HEATING; ELECTRIC LIGHTING NOT OTHERWISE PROVIDED FOR; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; PHYSICS; SEMICONDUCTOR DEVICES

PROBLEM TO BE SOLVED: To accurately and more simply calculate a recombination probability of a carrier in a multi-layer organic light-emitting element including hetero-junction.SOLUTION: An information processor for simulating a carrier transfer phenomenon in a multi-layer organic light-emitting element including hetero-junction comprises: an operation condition setting unit that sets, on the basis of user input, an element structure parameter for stipulating an organic light-emitting element's structure material and element structure and a drive parameter for stipulating a drive condition of the organic light-emitting element and sets, as an internal variable, a carrier state on a hetero junction surface; and a recombination probability operation unit that solves, on the basis of the set element structure parameter, drive parameter, and internal variable, a carrier transfer equation at the hetero-junction surface to operate a carrier recombination probability. The operation condition setting unit sets, as the internal variables, carrier densities of a positive and negative carrier at the hetero-junction surface and electric field strength at the hetero-junction surface.SELECTED DRAWING: Figure 5 【課題】ヘテロ接合を有する多層型の有機発光素子におけるキャリアの再結合確率を、精度よく、かつ、より簡便に算出すること。【解決手段】本発明に係る情報処理装置は、ヘテロ接合を有する多層型の有機発光素子でのキャリア輸送現象をシミュレートするものであり、有機発光素子の構成物質及び素子構造を規定する素子構成パラメータと、有機発光素子の駆動条件を規定する駆動パラメータとをユーザ入力に基づいて設定するとともに、ヘテロ接合面でのキャリアの状態を内部変数として設定する演算条件設定部と、設定された素子構成パラメータ、駆動パラメータ及び内部変数に基づいて、ヘテロ接合面でのキャリアの輸送方程式を求解して、キャリアの再結合確率を演算する再結合確率演算部と、を備え、演算条件設定部は、内部変数として、ヘテロ接合面での正及び負のキャリアのキャリア密度、並びに、ヘテロ接合面での電界強度を設定する。【選択図】図５