SOLID STATE IMAGING DEVICE

• Main Authors: AISU KATSUHIKO, NEGORO TAKAAKI, YONEDA KAZUHIRO, UEDA KEITOKU, WATANABE HIROBUMI, ONO KATSUYUKI, NAKATANI YASUKAZU
• Format: Patent
• Language: English; Japanese
• Published: 23.05.2016
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

PROBLEM TO BE SOLVED: To provide a solid state imaging device capable of preventing an optical charge of photoelectric conversion elements adjacent to each other from mixing, and realizing miniaturization.SOLUTION: A solid state imaging device includes a plurality of pixels 103. The solid state imaging device further comprises: a first semiconductor layer 105 of a first electrical conduction type; a second semiconductor layer 107 of the first electrical conduction type adjacently arranged to the first semiconductor layer 105; a second electrical conduction type semiconductor region 111 arranged in the second semiconductor layer 107; a deep groove 123 that insulates and separates the neighboring pixels 103; and an electrode 127 embedded in the deep groove 123. The electrical conduction type semiconductor region 111, the second semiconductor layer 107, and the first semiconductor layer 105 are arranged in order from the front surface side. The second semiconductor layer 107 is separated in each pixels 103 by the deep grove 123. An impurity density of the first electrical conduction type of the first semiconductor layer 105 is higher than the impurity density of the first electrical conduction type of the second semiconductor layer 107. The deep grove 123 is contacted with the first semiconductor layer 105.SELECTED DRAWING: Figure 1 【課題】固体撮像素子において、隣り合う光電変換素子同士の光電荷が混ざるのを防止し、かつ微細化を実現する。【解決手段】固体撮像素子は複数の画素１０３を備えている。また、固体撮像素子は、第１導電型の第１半導体層１０５と、第１半導体層１０５上に隣接して配置された第１導電型の第２半導体層１０７と、第２半導体層１０７内に配置された第２導電型半導体領域１１１と、隣り合う画素１０３同士を絶縁分離する深溝１２３と、深溝１２３内に埋め込まれた電極１２７と、を備えている。表面側から第２導電型半導体領域１１１、第２半導体層１０７、第１半導体層１０５の順に並んでいる。第２半導体層１０７は深溝１２３によって画素１０３ごとに分離されている。第１半導体層１０５の第１導電型の不純物濃度は第２半導体層１０７の第１導電型の不純物濃度に比べて高い。深溝１２３は第１半導体層１０５に接している。【選択図】図１