SEMICONDUCTOR LAMINATE, LIGHT RECEIVING ELEMENT AND SENSOR

• Main Authors: NISHIZUKA KOJI, SHIBATA KAORU, AKITA KATSUSHI, ARIKATA SUGURU, KYONO TAKASHI
• Format: Patent
• Language: English; Japanese
• Published: 23.05.2016
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

PROBLEM TO BE SOLVED: To provide a semiconductor laminate, a light receiving element and a sensor, which are capable of improving sensitivity.SOLUTION: A semiconductor laminate 10 comprises: base layers 20, 30 each composed of a group III-V compound semiconductor and has n-type conductivity; a quantum well structure 40 composed of a group III-V compound semiconductor; a diffusion block layer 60 which is composed of a group III-V compound semiconductor and has a thickness of 50 nm and over and a p-type impurity concentration equal to or lower than 1×10cm; and a contact layer 50 which is composed of a group III-V compound semiconductor and has p-type conductivity. The base layers 20, 30, the quantum we structure 40, the diffusion block layer 60 and the contact layer 50 are arranged by lamination of this order.SELECTED DRAWING: Figure 1 【課題】感度の向上を可能とする半導体積層体、受光素子およびセンサを提供する。【解決手段】半導体積層体１０は、ＩＩＩ−Ｖ族化合物半導体からなり、導電型がｎ型であるベース層２０，３０と、ＩＩＩ−Ｖ族化合物半導体からなる量子井戸構造４０と、ＩＩＩ−Ｖ族化合物半導体からなり、厚みが５０ｎｍ以上であり、ｐ型不純物濃度が１×１０１６ｃｍ−３以下である拡散ブロック層６０と、ＩＩＩ−Ｖ族化合物半導体からなり、導電型がｐ型であるコンタクト層５０と、を備える。ベース層２０，３０、量子井戸構造４０、拡散ブロック層６０およびコンタクト層５０は、この順に積層して配置される。【選択図】図１