PLASMA PROCESSING DEVICE

• Main Author: YOSHIKAWA JUN
• Format: Patent
• Language: English; Japanese
• Published: 23.05.2016
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OFNEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMICBEAMS; SEMICONDUCTOR DEVICES

PROBLEM TO BE SOLVED: To provide a plasma processing device arranged so as to introduce gas without generating discharge in a spray hole or in the vicinity thereof.SOLUTION: A plasma processing device comprises: a process chamber which defines a processing space; a gas supplying unit 13 provided on a side wall 22 of the process chamber for supplying gas to the processing space; a dielectric member having an opposing face opposed to the processing space; and an antenna provided on a face of the dielectric member on the side opposite to the opposing face and serving to radiate microwaves for producing plasma of the gas through the dielectric member into the processing space. The gas supplying unit 13 has: a transport hole 13-1 for transporting the gas at a position where the gas cannot reach the processing space in the side wall 22 of the process chamber; and a spray hole 13-2 arranged to communicate to the transport hole 13-1 for spraying the gas transported to the position to the processing space, and having a diameter D2 larger than the diameter D1 of the transport hole 13-1.SELECTED DRAWING: Figure 5 【課題】噴射孔において又は噴射孔の近傍において放電を発生させることなくガスを導入するプラズマ処理装置の提供。【解決手段】プラズマ処理装置は、処理空間を画成する処理容器と、前記処理容器の側壁２２に設けられ、前記処理空間にガスを供給するガス供給部１３と、前記処理空間に対向する対向面を有する誘電体部材と、前記誘電体部材の対向面とは反対側の面上に設けられ、前記ガスをプラズマ化するマイクロ波を、前記誘電体部材を介して前記処理空間へ放射するアンテナとを備える。ガス供給部１３は、処理容器の側壁２２の内部において処理空間へ到達しない位置までガスを輸送する輸送孔１３−１と、輸送孔１３−１に連通され、位置まで輸送された前記ガスを前記処理空間へ噴射する噴射孔１３−２であって、輸送孔１３−１の直径Ｄ１よりも直径Ｄ２が大きい噴射孔１３−２とを有する。【選択図】図５