ETCHING METHOD

PROBLEM TO BE SOLVED: To etch a silicon for silicon germanium at a high selection rate, without limiting the process conditions significantly, by using a simple gas system not containing fluorine.SOLUTION: A processed substrate containing silicon and silicon germanium is placed in a chamber, process...

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Bibliographic Details
Main Authors TAKEYA KOJI, TAKAHASHI NOBUHIRO, NISHIMURA KAZUAKI, MATSUNAGA JUNICHIRO
Format Patent
LanguageEnglish
Japanese
Published 12.05.2016
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:PROBLEM TO BE SOLVED: To etch a silicon for silicon germanium at a high selection rate, without limiting the process conditions significantly, by using a simple gas system not containing fluorine.SOLUTION: A processed substrate containing silicon and silicon germanium is placed in a chamber, process gas composed of Hgas and Ar gas is supplied, in excited state, into the chamber, and then the silicon is etched selectively for the silicon germanium.SELECTED DRAWING: Figure 3 【課題】フッ素を含まずかつシンプルなガス系を用いて、プロセス条件を大きく限定することなくシリコンゲルマニウムに対しシリコンを高選択比でエッチングする。【解決手段】シリコンとシリコンゲルマニウムを有する被処理基板をチャンバー内に配置し、チャンバー内にＨ２ガスとＡｒガスからなる処理ガスを励起した状態で供給し、シリコンをシリコンゲルマニウムに対して選択的にエッチングする。【選択図】図３
Bibliography:Application Number: JP20140207714