LIQUID PROCESSING METHOD, STORAGE MEDIUM AND LIQUID PROCESSING DEVICE

PROBLEM TO BE SOLVED: To provide a liquid processing method capable of performing satisfactory liquid processing on an edge of a wafer by suppressing a liquid splash of a processing liquid even if a rotation speed of the wafer is accelerated when performing the liquid processing over all the surface...

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Bibliographic Details
Main Authors TAKAHASHI SHOGO, NIWA TAKAFUMI, KODAMA TERUHIKO, KAI AKIKO, NISHIHATA HIROSHI, TERASHITA YUICHI
Format Patent
LanguageEnglish
Japanese
Published 09.05.2016
Subjects
APPARATUS SPECIALLY ADAPTED THEREFOR
BASIC ELECTRIC ELEMENTS
CINEMATOGRAPHY
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
ELECTROGRAPHY
HOLOGRAPHY
MATERIALS THEREFOR
ORIGINALS THEREFOR
PHOTOGRAPHY
PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES
PHYSICS
SEMICONDUCTOR DEVICES
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Summary:PROBLEM TO BE SOLVED: To provide a liquid processing method capable of performing satisfactory liquid processing on an edge of a wafer by suppressing a liquid splash of a processing liquid even if a rotation speed of the wafer is accelerated when performing the liquid processing over all the surface of the wafer using the processing liquid while rotating the wafer.SOLUTION: When performing a liquid processing using a processing liquid while horizontally holding a wafer W in a freely rotatable wafer holding part 11, after the processing liquid is performed on at least a portion of the wafer W closer to a center than an edge by the processing liquid, a discharge port 321 of a processing liquid nozzle 32 is turned to a downstream side in a direction rotation while rotating the wafer W, and the processing liquid is discharged to the edge of the wafer W obliquely to the surface of the wafer W and in a tangential direction of the wafer W. While discharging the processing liquid, a gas is discharged vertically from a gas nozzle 31 in a direction from an application position of the processing liquid to a position that is neighboring relatively to the central part of the wafer W.SELECTED DRAWING: Figure 2 【課題】基板を回転させながら基板の表面全体に対して処理液により液処理を行うにあたって、基板の回転数を高くしても処理液の液跳ねを抑えることができ、これにより基板の周縁部に対して良好な液処理を行うことができる液処理方法などを提供する。【解決手段】基板Ｗを回転自在な基板保持部１１に水平に保持し、処理液により液処理を行うにあたり、少なくとも基板Ｗの周縁部よりも中心側の部位に対して処理液により液処理を行った後、基板Ｗを回転させながら、処理液ノズル３２の吐出口３２１を回転方向の下流側に向け、基板Ｗの表面に対して斜めにかつ基板Ｗの接線方向に沿って処理液を基板Ｗの周縁部に吐出する。当該処理液の吐出を行いながら、前記処理液の着液位置から基板Ｗの中心部に向かって隣接する位置に向けてガスノズル３１からガスを垂直に吐出する。【選択図】図２
Bibliography:Application Number: JP20140203176