MANUFACTURE METHOD OF LIGHT-EMITTING DEVICE

• Main Authors: ARAO TATSUYA, ISOBE ATSUO, TAKAYAMA TORU
• Format: Patent
• Language: English; Japanese
• Published: 28.04.2016
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC HEATING; ELECTRIC LIGHTING NOT OTHERWISE PROVIDED FOR; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

PROBLEM TO BE SOLVED: To provide an inexpensive semiconductor device by realizing a further low temperature process (350°C or less, preferably, 300°C or less).SOLUTION: After forming a semiconductor layer 103 having crystalline structure, a p-type impurity element and a hydrogen element are added simultaneously to one part of the semiconductor layer 103 having a crystalline substance, by using an ion doping method, to form an impurity region 107 (a region having an amorphous structure), and then heat treatment at 100-300°C is performed to form a low-resistance and amorphous impurity region 108, and the impurity region 108 is made a source region or a drain region of a TFT while being left as an amorphous region.SELECTED DRAWING: Figure 1 【課題】さらなる低温プロセス（３５０℃以下、好ましくは３００℃以下）を実現し、安価な半導体装置を提供する。【解決手段】本発明は、結晶構造を有する半導体層１０３を形成した後、イオンドーピング法を用いて結晶質を有する半導体層１０３の一部にｐ型不純物元素及び水素元素を同時に添加して不純物領域１０７（非晶質構造を有する領域）を形成した後、１００〜３００℃の加熱処理を行うことにより、低抵抗、且つ非晶質な不純物領域１０８を形成し、非晶質な領域のままでＴＦＴのソース領域またはドレイン領域とする。【選択図】図１