SYSTEMS AND METHODS FOR REDUCING BACKSIDE DEPOSITION AND MITIGATING THICKNESS CHANGES AT SUBSTRATE EDGES

• Main Authors: TED MINSHALL, SAANGRUT SANGPLUNG, MOHAMED SABRI, SESHA VARADARAJAN, SHANKAR SWAMINATHAN, ADRIEN LAVOIE, FRANK PASQUALE, CODY BARNETT
• Format: Patent
• Language: English; Japanese
• Published: 25.04.2016
• Subjects: BASIC ELECTRIC ELEMENTS; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; SEMICONDUCTOR DEVICES; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION

PROBLEM TO BE SOLVED: To provide methods for reducing backside deposition of a processed substrate and mitigating thickness changes at substrate edges during deposition of a film.SOLUTION: A processing chamber 12 for depositing a film on a substrate defines a reaction volume and includes a substrate support 16 to support the substrate. A gas delivery system 20 is configured to introduce process gas into the reaction volume of the processing chamber. A plasma generator 46 is configured to selectively generate radio frequency plasma in the reaction volume. A clamping system 68 is configured to clamp the substrate to the substrate support 16 during deposition of the film. A backside purging system 74 is configured to supply a reactant gas to a backside edge 18 of the substrate to purge the backside edge 18 during the deposition of the film.SELECTED DRAWING: Figure 2 【課題】処理基板の裏面成膜を低減し、成膜中の基板端部の厚さ変化を緩和する方法を提供する。【解決手段】基板上に成膜するための処理室１２は、反応容量を画定し、基板を支持する基板支持部１６を含む。ガス送達システム２０は、処理ガスを処理室の反応容量に導入するように構成される。プラズマ発生器４６は、高周波プラズマを反応容量内で選択的に発生させるように構成される。クランプシステム６８は、成膜中に、基板を基板支持部１６にクランプするように構成される。裏面パージシステム７４は、反応ガスを基板裏面端部１８に供給して、裏面端部１８を成膜中にパージするように構成される。【選択図】図２