PHOTODETECTOR

• Main Authors: SASAKI KEITA, FUNAKI HIDEYUKI, UENO RISAKO
• Format: Patent
• Language: English; Japanese
• Published: 25.04.2016
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

PROBLEM TO BE SOLVED: To provide a photodetector capable of improving the sensitivity to light in the near-infrared region in a simple constitution.SOLUTION: A photodetector 10 includes a first photodetecting layer 12A and a reflecting layer 20. The first photodetecting layer 12A has a first surface 15A on which light is incident and a second surface 15B on a side opposite to the first surface 15A, and includes a first photodetecting region 140 including a pn junction where a p-type semiconductor layer containing Si as main constituents and an n-type semiconductor layer containing Si as main constituents are joined. The reflecting layer 20 is arranged on a second surface 15B side of the first photodetecting region 140 and reflects at least a part of light in the near-infrared region.SELECTED DRAWING: Figure 1 【課題】簡易な構成で、近赤外領域の光に対する感度を向上させることができる、光検出器を提供する。【解決手段】光検出器１０は、第１の光検出層１２Ａと、反射層２０と、を備える。第１の光検出層１２Ａは、光の入射する第１面１５Ａと第１面１５Ａの反対側の第２面１５Ｂとを有し、Ｓｉを主成分として含むｐ型半導体層とＳｉを主成分として含むｎ型半導体層とを接合したｐｎ接合を含む第１の光検出領域１４０を備える。反射層２０は、第１の光検出領域１４０の第２面１５Ｂ側に設けられ、近赤外領域の少なくとも一部の光を反射する。【選択図】図１