SEMICONDUCTOR DEVICE

• Main Authors: YAMASHITA HIROAKI, ONO SHOTARO, URA HIDEYUKI, IZUMISAWA MASARU
• Format: Patent
• Language: English; Japanese
• Published: 25.04.2016
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

PROBLEM TO BE SOLVED: To provide a semiconductor device capable of reducing an electric field at a surface of a semiconductor region in a termination region.SOLUTION: A semiconductor device according to an embodiment comprises a first semiconductor region of a first conductivity type, a second semiconductor region of a second conductivity type, an element region, and a termination region. The second semiconductor region is provided in the first semiconductor region. The element region includes a third semiconductor region of the second conductivity type, a fourth semiconductor region of the first conductivity type, and a gate electrode. The gate electrode is opposed to the third and fourth semiconductor regions via a gate insulating layer. The termination region has a first electrode. The termination region surrounds the element region. The first electrode has a first portion extending in a first direction, and a second portion extending in a second direction. A plurality of first electrodes are provided on the first and second semiconductor regions. An interval between the first portions adjacent in the second direction is narrower than that between the second portions adjacent in the first direction.SELECTED DRAWING: Figure 2 【課題】終端領域における半導体領域表面の電界を低減可能な半導体装置を提供する。【解決手段】実施形態の半導体装置は、第１導電形の第１半導体領域と、第２導電形の第２半導体領域と、素子領域と、終端領域と、を有する。第２半導体領域は、第１半導体領域内に設けられている。素子領域は、第２導電形の第３半導体領域と、第１導電形の第４半導体領域と、ゲート電極と、を有する。ゲート電極は、ゲート絶縁層を介して、第３半導体領域及び第４半導体領域に向かい合っている。終端領域は、第１電極を有する。終端領域は、素子領域を囲んでいる。第１電極は、第１方向に延びる第１部分と、第２方向に延びる第２部分と、を有する。第１電極は、第１半導体領域上及び第２半導体領域上に複数設けられている。第２方向において隣り合う第１部分の間隔は、第１方向において隣り合う第２部分の間隔よりも狭い。【選択図】図２