SEMICONDUCTOR DEVICE FOR POWER AND GATE DRIVER CIRCUIT

• Main Author: MIWA RYOTA
• Format: Patent
• Language: English; Japanese
• Published: 21.04.2016
• Subjects: APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC,OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWERSUPPLY SYSTEMS; BASIC ELECTRONIC CIRCUITRY; CONTROL OR REGULATION THEREOF; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUTPOWER; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER; ELECTRICITY; GENERATION; PULSE TECHNIQUE

PROBLEM TO BE SOLVED: To provide a semiconductor device for power, capable of suppressing malfunction in a high-side driver.SOLUTION: The semiconductor device for power includes a first output transistor having one end of a current path connected with a first node. The semiconductor device for power also includes a second output transistor having one end of a current path connected with the other end of the current path of the first output transistor and having the other end of the current path connected with a second node. The semiconductor device for power also includes a gate driver circuit for controlling the first and the second output transistors.SELECTED DRAWING: Figure 1 【課題】ハイサイドドライバの誤動作を抑制することが可能なパワー用半導体装置を提供する。【解決手段】パワー用半導体装置は、電流経路の一端が第１のノードに接続された第１の出力トランジスタを備える。パワー用半導体装置は、電流経路の一端が前記第１の出力トランジスタの電流経路の他端に接続され、前記電流経路の他端が第２のノードに接続された第２の出力トランジスタを備える。パワー用半導体装置は、前記第１および第２の出力トランジスタを制御するゲートドライバ回路を備える。【選択図】図１