CIRCUIT DEVICE HAVING THREE-DIMENSIONAL WIRING, METHOD FOR FORMING THREE-DIMENSIONAL WIRING, AND A COMPOSITION FOR METAL FILM FORMATION FOR THREE-DIMENSIONAL WIRING

• Main Authors: OKITA KENZO, ARITOME ISAO, MATSUMOTO TAICHI, SHIMODA SUGIO, KURIYAMA KEISUKE
• Format: Patent
• Language: English; Japanese
• Published: 07.04.2016
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

PROBLEM TO BE SOLVED: To provide a circuit device having three-dimensional wiring with good conductivity, which makes possible to readily manufacture the three-dimensional wiring with a relatively high productivity at a relatively low manufacturing cost.SOLUTION: A circuit device 1 having three-dimensional wiring arranged so that an upper wiring 12a and a lower wiring 12b are electrically connected to each other by a contact plug 14a is manufactured. The contact plug 14a includes a seed layer S formed by heating a coating film of a composition for metal film formation which includes at least one a salt of a metal selected from Group X and Group XI of the periodic table and particles thereof.SELECTED DRAWING: Figure 1 【課題】導電性が良好な３次元配線を有し、当該３次元配線を比較的高い生産性の下に、かつ比較的低い製造コストの下に製造することが容易な３次元配線を有する回路装置を提供する。【解決手段】上側配線１２ａと下側配線１２ｂとがコンタクトプラグ１４ａによって互いに電気的に接続されている３次元配線を有する回路装置１を作製するにあたって、コンタクトプラグ１４ａを構成するシード層Ｓは、周期表の第１０族および第１１族から選ばれる金属の塩および粒子の少なくとも一方を含有する金属膜形成用組成物の塗膜を加熱することで形成する。【選択図】図１