SINGLE CRYSTAL GROWING APPARATUS

• Main Authors: UMEMURA TETSURO, NAGATA MASARU
• Format: Patent
• Language: English; Japanese
• Published: 07.04.2016
• Subjects: AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR; CHEMISTRY; CRYSTAL GROWTH; METALLURGY; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; REFINING BY ZONE-MELTING OF MATERIAL; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; SINGLE-CRYSTAL-GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL

PROBLEM TO BE SOLVED: To provide a single crystal growing apparatus that, when a plurality of single crystal semiconductors are manufactured at the same time by an EFG method (edge-defined film-fed growth method), effectively reduces generation of cracks and breakage in the single crystal semiconductors.SOLUTION: A single crystal growing apparatus 10 comprises: a crucible 1 in which a semiconductor raw material is filled; heating means for heating the crucible 1 to melt the semiconductor raw material; a mold 3 that has a plurality of slits extending vertically and is immersed in a molten liquid 2 of the semiconductor raw material at a lower opening of each of the plurality of slits; a holder 6 that has a plurality of branch parts 4 being vertically liftable and lowerable and extending on a vertically perpendicular plane with a distance from each other and holds seed crystals by the plurality of branch parts 4 corresponding to upper openings of the plurality of slits; and heat insulating members 7, 8 that are arranged between regions through which the plurality of lifting and lowering branches parts 4 pass.SELECTED DRAWING: Figure 1 【課題】複数の単結晶半導体を同時にＥＦＧ法（Edge-defined Film-fed Growth Method）によって製造する場合に、単結晶半導体にクラックや割れが生じるのを有効に低減する単結晶育成装置の提供。【解決手段】半導体原料が充填される坩堝１と、坩堝１を加熱して半導体原料を溶融させるための加熱手段と、上下方向に延びる複数のスリットを有するとともに複数のスリットのそれぞれの下側開口が半導体原料の融液２に浸漬される金型３と、上下方向に昇降可能であるとともに上下方向に垂直な平面上において互いに間隔をあけて延びる複数の枝部４を有しており、複数のスリットのそれぞれの上側開口に対応するように複数の枝部４のそれぞれに種結晶が保持されるホルダ６と、昇降する複数の枝部４の通過領域同士の間に配置された保温部材７、８とを具備する単結晶育成装置１０。【選択図】図１