POLISHING METHOD

• Main Authors: KODERA KENJI, NAKANISHI MASAYUKI, YAMASHITA MICHIYOSHI
• Format: Patent
• Language: English; Japanese
• Published: 04.04.2016
• Subjects: BASIC ELECTRIC ELEMENTS; DRESSING OR CONDITIONING OF ABRADING SURFACES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS; GRINDING; MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; PERFORMING OPERATIONS; POLISHING; SEMICONDUCTOR DEVICES; TOOLS FOR GRINDING, BUFFING, OR SHARPENING; TRANSPORTING

PROBLEM TO BE SOLVED: To provide a method for polishing a peripheral part of a wafer with a hard film formed thereon using a polishing tape while preventing the polishing tape from being damaged.SOLUTION: A polishing method of the present invention uses a polishing tape 180 including a base material film comprising polyimide, a binder comprising polyimide, and abrasive grains held by the binder. In the present polishing method, a silicon substrate W having a surface on which a silicon carbide film is formed is rotated, and the polishing tape 180 is pressed against the silicon carbide film on the peripheral part of the silicon substrate W with a low force thereby to remove the silicon carbide film from the peripheral part of the silicon substrate W.SELECTED DRAWING: Figure 2 【課題】研磨テープの損傷を防止しつつ該研磨テープを用いて硬質膜が形成されているウェーハの周縁部を研磨する方法を提供する。【解決手段】本発明の研磨方法は、ポリイミドからなる基材フィルムと、ポリイミドからなるバインダと、バインダにより保持された砥粒とを有する研磨テープ１８０を用いる。本研磨方法は、炭化ケイ素膜が表面に形成されたシリコン基板Ｗを回転させ、研磨テープ１８０を、シリコン基板Ｗの周縁部上の炭化ケイ素膜に低い力で押し付けて、シリコン基板Ｗの周縁部から炭化ケイ素膜を除去する。【選択図】図２