ALUMINOUS SUBSTRATE AND SEMICONDUCTOR DEVICE SUBSTRATE

• Main Authors: KITANI NAOKI, KITAMURA DAISUKE
• Format: Patent
• Language: English; Japanese
• Published: 31.03.2016
• Subjects: ARTIFICIAL STONE; BASIC ELECTRIC ELEMENTS; CABLES; CEMENTS; CERAMICS; CHEMISTRY; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDINGMATERIALS; CONCRETE; CONDUCTORS; ELECTRICITY; INSULATORS; LIME, MAGNESIA; METALLURGY; REFRACTORIES; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING ORDIELECTRIC PROPERTIES; SLAG; TREATMENT OF NATURAL STONE

PROBLEM TO BE SOLVED: To provide an aluminous substrate and a semiconductor device substrate having excellent surface smoothness after sintering, and eliminating the need for warpage-correcting sintering.SOLUTION: The composition of an aluminous substrate 1 comprises 92-95 wt.% of alumina (AlO) as the predominant component, and 4-6 wt.% of yttria partially stabilized zirconia (ZrO-YO), 0.2-0.5 wt.% of magnesia (MgO), 0.05-0.2 wt.% of calsia (CaO), and 0.4-1.0 wt.% of silica (SiO) as the accessory components.SELECTED DRAWING: Figure 1 【課題】焼結後の平坦性に優れ、反り直し焼成を不要とすることができるアルミナ質基板及び半導体装置用基板を、提供する。【解決手段】アルミナ質基板１の組成は、９２〜９５重量％のアルミナ（Ａｌ2Ｏ3）を主成分とし、４〜６重量％のイットリア部分安定化ジルコニア（ＺｒＯ2−Ｙ2Ｏ3）、０．２〜０．５重量％のマグネシア（ＭｇＯ）、０．０５〜０．２重量％のカルシア（ＣａＯ）、０．４〜１．０重量％のシリカ（ＳｉＯ2）を副成分としたものである。【選択図】図１