ELECTRODE STRUCTURE OF SILICON PHOTONICS MODULATOR

• Main Authors: SUZUKI YASUYUKI, YASHIKI KENICHIRO
• Format: Patent
• Language: English; Japanese
• Published: 10.03.2016
• Subjects: DEVICES OR ARRANGEMENTS, THE OPTICAL OPERATION OF WHICH ISMODIFIED BY CHANGING THE OPTICAL PROPERTIES OF THE MEDIUM OF THEDEVICES OR ARRANGEMENTS FOR THE CONTROL OF THE INTENSITY,COLOUR, PHASE, POLARISATION OR DIRECTION OF LIGHT, e.g.SWITCHING, GATING, MODULATING OR DEMODULATING; FREQUENCY-CHANGING; NON-LINEAR OPTICS; OPTICAL ANALOGUE/DIGITAL CONVERTERS; OPTICAL LOGIC ELEMENTS; OPTICS; PHYSICS; TECHNIQUES OR PROCEDURES FOR THE OPERATION THEREOF

PROBLEM TO BE SOLVED: To provide an electrode structure of a small silicon photonics modulator with multichannel and high density to cause the silicon photonics modulator to perform high-speed operation at a high frequency.SOLUTION: An electrode structure of a silicon photonics modulator includes on a silicon substrate plane surface: a first layer for forming a plurality of bias electrical wiring; and a second layer formed by positioning each of a plurality of ground electrode parts with the wiring of the first layer, respectively.SELECTED DRAWING: Figure 7A 【課題】多チャンネル且つ高密度の小型シリコンフォトニクス変調器の電極構造を提供して、当該シリコンフォトニクス変調器を高周波で高速動作させること。【解決手段】本発明のシリコンフォトニクス変調器の電極構造は、シリコン基板平面上に、複数のバイアス電気配線を形成するための第１層と、複数のグランド電極部を、それぞれ第１層の電気配線と位置合わせして形成した第２層とを備える。【選択図】図７Ａ