SILICON CARBIDE SEMICONDUCTOR DEVICE

• Main Authors: HIYOSHI TORU, UCHIDA MITSUAKI
• Format: Patent
• Language: English; Japanese
• Published: 03.03.2016
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

PROBLEM TO BE SOLVED: To provide a silicon carbide semiconductor device enhanced in switching characteristic.SOLUTION: MOSFET 1 comprises: a silicon carbide layer 10; a gate insulative film 15; a gate electrode 27; and a source electrode 16. The silicon carbide layer 10 includes: a drift region 12;...