FILM DEPOSITION METHOD, FILM DEPOSITION APPARATUS, AND STRUCTURE

• Main Authors: FUCHIDA HIDETSUGU, OZAWA HIDEKAZU, TOKIZAKI EIJI
• Format: Patent
• Language: English; Japanese
• Published: 18.02.2016
• Subjects: CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION

PROBLEM TO BE SOLVED: To provide a film deposition method and apparatus capable of depositing an insulating film having high dielectric voltage even in a thin film state by increasing the denseness and adhesiveness of a formed film.SOLUTION: In a film deposition method, gas is introduced into a closed container 2 storing raw material particles P with electrical insulation properties to generate aerosol A of the raw material particles P; aerosol A' is transferred to a film deposition chamber 3 having pressure lower than that of the closed container 2 through a transfer pipe 6 connected to the closed container 2; the aerosol A' is injected from a nozzle 18 attached to a tip of the transfer pipe 6 to a target 19 installed in the film deposition chamber 3; the raw material particles P are made to collide with the target 19 to positively charge the raw material particles P; fine particles of the raw material particles P are generated by discharge of the charged raw material particles P; and the fine particles are deposited on a substrate S installed in the film deposition chamber 3. In addition, a conductive material is used as the target 19; alumina particulates or aluminum nitride grains are used as the raw material particles P; and one of N, Ar, and O or mixed gas of two or more thereof is used as the gas.SELECTED DRAWING: Figure 2 【課題】形成される膜の緻密性及び密着性を高めて、薄膜状態でも高い絶縁耐圧を有する絶縁膜を形成可能な成膜方法及び成膜装置の提供。【解決手段】電気絶縁性の原料粒子Ｐを収容した密閉容器２にガスを導入して、原料粒子ＰのエアロゾルＡを生成し、密閉容器２に接続された搬送管６を介して、密閉容器２よりも低圧の成膜室３にエアロゾルＡ'を搬送し、搬送管６の先端に取り付けられたノズル１８から、成膜室３に設置されたターゲット１９に向けてエアロゾルＡ'を噴射し、原料粒子Ｐをターゲット１９に衝突させ、原料粒子Ｐをプラスに帯電させ、帯電した原料粒子Ｐの放電によって、原料粒子Ｐの微細粒子を生成し、微細粒子を成膜室３に設置された基材Ｓ上に堆積させる成膜方法。ターゲット１９として導電材でを用い、原料粒子Ｐとして、アルミナ微粒子又は窒化アルミニウム粒を用い、ガスとしてＮ，Ａｒ又はＯの１種又は２種以上の混合ガスを用いる成膜方法。【選択図】図２