GAS SUPPLY DEVICE AND VALVE DEVICE

• Main Author: OKURA NARIYUKI
• Format: Patent
• Language: English; Japanese
• Published: 08.02.2016
• Subjects: BASIC ELECTRIC ELEMENTS; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; SEMICONDUCTOR DEVICES; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION

PROBLEM TO BE SOLVED: To provide a technique which is capable of making a flow rate of Ngas larger while suppressing cooling of a valve device 1 in alternately supplying TiClgas and NHgas for plural times to a substrate and depositing a film, and can contribute to improvement of throughput.SOLUTION: In alternately supplying TiClgas and NHgas for plural times to a wafer W and depositing a film, Ngas for atmosphere replacement supplied into a processing container 10 is heated in advance between supply of one process gas and supply of the other process gas. Therefore, a flow rate of Ngas can be made larger while suppressing cooling of an inner wall of the processing container 10 or a gas contact portion of the wafer W or the like, so that time required for atmosphere replacement can be shortened, which can contribute to improvement of throughput, and occurrence of a problem, such as adhesion of a reaction product caused by cooling of a valve device 1, is suppressed.SELECTED DRAWING: Figure 1 【課題】ＴｉＣｌ４ガスとＮＨ３ガスとを交互に複数回基板に供給して成膜を行うにあたり、バルブ装置１の冷却を抑えながらＮ２ガスの流量を大きくすることが可能であり、スループット向上に寄与することができる技術を提供する。【解決手段】ＴｉＣｌ４ガスとＮＨ３ガスとを交互に複数回ウエハＷに供給して成膜を行うにあたり、一方の処理ガスの供給と他方の処理ガスの供給との間に処理容器１０内に供給される雰囲気置換用のＮ２ガスを事前に加熱している。このため、処理容器１０の内壁やウエハＷなどの接ガス部位の冷却を抑えながらＮ２ガスの流量を大きくすることができるので、雰囲気の置換に要する時間を短縮でき、スループットの向上に寄与することができると共に、バルブ装置１の冷却による反応生成物の付着などの不具合の発生が抑えられる。【選択図】図１