SEMICONDUCTOR DEVICE
PROBLEM TO BE SOLVED: To provide a technique capable of reducing the number of processes when manufacturing a semiconductor device.SOLUTION: A semiconductor device 1 includes: a semiconductor substrate 2; an insulator film 3 formed on the semiconductor substrate 2; a SInSiN film 4 which is formed on...
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| Format | Patent |
| Language | English Japanese |
| Published |
04.02.2016
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| Abstract | PROBLEM TO BE SOLVED: To provide a technique capable of reducing the number of processes when manufacturing a semiconductor device.SOLUTION: A semiconductor device 1 includes: a semiconductor substrate 2; an insulator film 3 formed on the semiconductor substrate 2; a SInSiN film 4 which is formed on the insulator film 3 and includes a temperature detection part 41 and a periphery protective part 42 formed in the periphery of the temperature detection part 41 being separated from the temperature detection part 41, and whose electric resistance changes according to a temperature; and electric wiring 6 connected to the temperature detection part 41.SELECTED DRAWING: Figure 2
【課題】半導体装置を生産するときに工程数を削減することができる技術を提供する。【解決手段】半導体装置１は、半導体基板２と、半導体基板２の上に形成された絶縁膜３と、絶縁膜３の上に形成され、温度検知部４１と温度検知部４１から分離されて温度検知部４１の周囲に形成された周辺保護部４２とを備え、温度に応じて電気抵抗が変化するＳＩｎＳｉＮ膜４と、温度検知部４１に接続された配線６とを備えている。【選択図】図２ |
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| AbstractList | PROBLEM TO BE SOLVED: To provide a technique capable of reducing the number of processes when manufacturing a semiconductor device.SOLUTION: A semiconductor device 1 includes: a semiconductor substrate 2; an insulator film 3 formed on the semiconductor substrate 2; a SInSiN film 4 which is formed on the insulator film 3 and includes a temperature detection part 41 and a periphery protective part 42 formed in the periphery of the temperature detection part 41 being separated from the temperature detection part 41, and whose electric resistance changes according to a temperature; and electric wiring 6 connected to the temperature detection part 41.SELECTED DRAWING: Figure 2
【課題】半導体装置を生産するときに工程数を削減することができる技術を提供する。【解決手段】半導体装置１は、半導体基板２と、半導体基板２の上に形成された絶縁膜３と、絶縁膜３の上に形成され、温度検知部４１と温度検知部４１から分離されて温度検知部４１の周囲に形成された周辺保護部４２とを備え、温度に応じて電気抵抗が変化するＳＩｎＳｉＮ膜４と、温度検知部４１に接続された配線６とを備えている。【選択図】図２ |
| Author | NAGAOKA TATSUJI HAYASHI KATSUNORI |
| Author_xml | – fullname: HAYASHI KATSUNORI – fullname: NAGAOKA TATSUJI |
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| DocumentTitleAlternate | 半導体装置 |
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| Notes | Application Number: JP20140143843 |
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| RelatedCompanies | TOYOTA MOTOR CORP |
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| Snippet | PROBLEM TO BE SOLVED: To provide a technique capable of reducing the number of processes when manufacturing a semiconductor device.SOLUTION: A semiconductor... |
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| SubjectTerms | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES |
| Title | SEMICONDUCTOR DEVICE |
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