SEMICONDUCTOR DEVICE
PROBLEM TO BE SOLVED: To provide a technique capable of reducing the number of processes when manufacturing a semiconductor device.SOLUTION: A semiconductor device 1 includes: a semiconductor substrate 2; an insulator film 3 formed on the semiconductor substrate 2; a SInSiN film 4 which is formed on...
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Main Authors | , |
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Format | Patent |
Language | English Japanese |
Published |
04.02.2016
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Subjects | |
Online Access | Get full text |
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Summary: | PROBLEM TO BE SOLVED: To provide a technique capable of reducing the number of processes when manufacturing a semiconductor device.SOLUTION: A semiconductor device 1 includes: a semiconductor substrate 2; an insulator film 3 formed on the semiconductor substrate 2; a SInSiN film 4 which is formed on the insulator film 3 and includes a temperature detection part 41 and a periphery protective part 42 formed in the periphery of the temperature detection part 41 being separated from the temperature detection part 41, and whose electric resistance changes according to a temperature; and electric wiring 6 connected to the temperature detection part 41.SELECTED DRAWING: Figure 2
【課題】半導体装置を生産するときに工程数を削減することができる技術を提供する。【解決手段】半導体装置1は、半導体基板2と、半導体基板2の上に形成された絶縁膜3と、絶縁膜3の上に形成され、温度検知部41と温度検知部41から分離されて温度検知部41の周囲に形成された周辺保護部42とを備え、温度に応じて電気抵抗が変化するSInSiN膜4と、温度検知部41に接続された配線6とを備えている。【選択図】図2 |
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Bibliography: | Application Number: JP20140143843 |